Computer simulation of resist profiles at electron beam nanolithography
โ Scribed by Katia Vutova; Elena Koleva; Georgy Mladenov; Ivan Kostic; Takeshi Tanaka
- Book ID
- 104052528
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 378 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Resist profiles in PMMA are simulated for the case of single and triple layer electron beam lithography. Line width variations and edge slopes are compared in two cases. Improvements in line width variation and edge slopes have been shown to occur after proximity exposure correction. Further in the
A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named ELlS (Electron-beam Lithography Simulator) that can