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Computer simulation of epitaxial growth of gallium arsenide films

โœ Scribed by L. N. Aleksandrov; A. N. Kogan; V. I. D'yakonova; N. P. Trostina; R. V. Bochkova


Book ID
112428560
Publisher
Springer
Year
1980
Tongue
English
Weight
493 KB
Volume
23
Category
Article
ISSN
1573-9228

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The epitaxial growth of gallium arsenide
โœ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo