๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth Rates of Epitaxial Gallium Arsenide

โœ Scribed by Goldsmith, N.


Book ID
125523265
Publisher
The Electrochemical Society
Year
1963
Tongue
English
Weight
191 KB
Volume
110
Category
Article
ISSN
0013-4651

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Epitaxial gallium arsenide
โœ L. G. Lavrent'eva; M. P. Yakubenya; V. A. Moskovkin ๐Ÿ“‚ Article ๐Ÿ“… 1970 ๐Ÿ› Springer ๐ŸŒ English โš– 434 KB
The epitaxial growth of gallium arsenide
โœ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo