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Comprehensive physical modeling of nmosfet hot-carrier-induced degradation

โœ Scribed by M.M. Lunenborg; H.C. De Graaff; A.J. Mouthaan; J.F. Verweij Mesa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
260 KB
Volume
36
Category
Article
ISSN
0026-2714

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๐Ÿ“œ SIMILAR VOLUMES


Hot-carrier-induced abnormal gm degradat
โœ Yasuhisa Omura ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 771 KB

This paper describes hot-carrier-induced, abnormal g degradation in 0.04-mm-channel nMOSFETs / SIMOX, which is not m easily predicted, and its physical background. The discussion includes device simulations showing that the LDS / LDD structure plays a significant role in the abnormal g degradation.