Hot-carrier-induced abnormal gm degradation in sub-0.1-μm-channel nMOSFETs/SIMOX with LDD structure

✍ Scribed by Yasuhisa Omura

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 771 KB
• Volume: 45
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(98)00282-2

✦ Synopsis

This paper describes hot-carrier-induced, abnormal g degradation in 0.04-mm-channel nMOSFETs / SIMOX, which is not m easily predicted, and its physical background. The discussion includes device simulations showing that the LDS / LDD structure plays a significant role in the abnormal g degradation. Accordingly, the single-drain structure is strongly m recommended for sub-0.1-mm-channel nMOSFETs / SOI.