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Composition grading for base transit time minimization in SiGe-base heterojunction bipolar transistors

✍ Scribed by S.S. Winterton; C.J. Peters; N.G. Tarr


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
336 KB
Volume
36
Category
Article
ISSN
0038-1101

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Parameter extraction of a base-collector
✍ Seonghearn Lee πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation