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Composition and Surface Properties of a Silicon Dioxide Film Deposited by a Plasma-Chemical Technique

โœ Scribed by V. M. Izgorodin; Yu. V. Tolokonnikov; A. A. Aushev; A. F. Kovylov; N. L. Zolotukhina


Book ID
110403466
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
149 KB
Volume
36
Category
Article
ISSN
0018-1439

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Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process