Composite Platinum/Silicon Dioxide Films Deposited using CVD

✍ Scribed by T. P. Martin; C. P. Tripp; W. J. DeSisto

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 302 KB
• Volume: 11
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200406344

✦ Synopsis

We report the low temperature deposition of platinum/silicon dioxide composite films from tetraethylorthosilicate (TEOS) and platinum acetylacetonate (Pt(acac) 2 ). The simultaneous CVD of TEOS and Pt(acac) 2 , in the presence of oxygen, has been shown to reduce the decomposition temperature of TEOS to as low as 320 C (from 600 C without Pt(acac) 2 ). Composite films were grown at temperatures ranging from 300 C to 440 C, using an estimated 5:1 flow rate of TEOS to Pt(acac) 2 and in 0±70% oxygen atmosphere. The overall growth rate was maximized at 400 C and the overall activation energy of the thin film formation was ~80 kJ mol -1 . The SiO 2 phase was amorphous and the platinum phase crystalline with an average grain size of 9 nm as determined by X-ray diffraction (XRD). An in-situ Fourier-transform infrared (FTIR) spectroscopy study of the gas phase was undertaken to provide confirmation of the low temperature decomposition of TEOS promoted by Pt(acac) 2 . Despite the high Si/Pt ratio in the feed, the maximum observed Si/Pt ratio in the film was 1:1, suggesting a cooperative TEOS-Pt(acac) 2 decomposition mechanism.