𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Compensation effect of lattice constant in silicon n+-n- junctions by liquid phase epitaxy

✍ Scribed by Tokuzo Sukegawa; Masakazu Kimura; Akira Tanaka


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
396 KB
Volume
96
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Attempts of Homo p–n Junction Formation
✍ S. Kishimoto; A. Kato; A. Naito; Y. Sakamoto; S. Iida πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 63 KB

ZnS p-n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n-ZnS : In/p-ZnS : In, Ag, N/p-GaAs and p-ZnS : In, Ag, N/n-ZnS : In/n-GaAs. Both of these structures showed rectifying behavior which is expected for p-n junctions. The forward voltag

Effect of a static magnetic field on sil
✍ N. Armour; S. Dost πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 161 KB πŸ‘ 3 views

## Abstract Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three‐zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sect

Liquid phase epitaxy of SiC in the syste
✍ Dr. N. S. Peev; Yu. M. Tairov; N. A. Smirnova; A. A. Kalnin πŸ“‚ Article πŸ“… 1987 πŸ› John Wiley and Sons 🌐 English βš– 339 KB πŸ‘ 1 views

Liquid Phase Epihxy of Sic in the System Tb-Si-Sic by Temperature Gradient Zone Melting (111) ## Epitaxial Layer Properties I n the present work the electrophysical and structural properties of tlie RiC epitaxial layers grown by the temperature gradient 70118 melting method in vacuum conditions i