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Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

✍ Scribed by N. Armour; S. Dost

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
161 KB
Volume
45
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three‐zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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