Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

✍ Scribed by N. Armour; S. Dost

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 177 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000016

✦ Synopsis

Abstract

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72‐hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)