The plezoreslstlve coefliclents m n-MOSFET devices have been experimentally determined The 7c,, , n12. and for the first time stir two-dImensIona (2D) plezoreslstlve coefficients m the n-type mverslon layers have been analytically developed, Including the quantum effects, the mtravalley-mtervalley s
โฆ LIBER โฆ
Compensated MOSFET devices
โ Scribed by F.M. Klaassen; W. Hes
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 957 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
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