Piezoresistivity effects in N-MOSFET devices

✍ Scribed by Z.Z. Wanga; J. Suski; D. Collard; E. Dubois

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 570 KB
• Volume: 34
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(92)80140-x

✦ Synopsis

The plezoreslstlve coefliclents m n-MOSFET devices have been experimentally determined The 7c,, , n12. and for the first time stir two-dImensIona (2D) plezoreslstlve coefficients m the n-type mverslon layers have been analytically developed, Including the quantum effects, the mtravalley-mtervalley scattenng effects, the different saturation velocity effects and the hot-electron effects The cdrrler charge vanatlon due to the change of the band gap has also been taken mto account A mlxed 2D/3D model for the ptezoreslstmty effects has been introduced m the process/devrce simulator IMPACT and good agreement between slmulatlon and expenment has been achieved