Piezoresistive simulation in MOSFETs
โ Scribed by Z.Z. Wang; J. Suski; D. Collard
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 681 KB
- Volume
- 37-38
- Category
- Article
- ISSN
- 0924-4247
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The plezoreslstlve coefliclents m n-MOSFET devices have been experimentally determined The 7c,, , n12. and for the first time stir two-dImensIona (2D) plezoreslstlve coefficients m the n-type mverslon layers have been analytically developed, Including the quantum effects, the mtravalley-mtervalley s
This paper discusses the main issues related to the application of numerical device simulation to advanced decananometer-size MOSFETs. The main trends of CMOS technology evolution are analyzed and discussed with emphasis on the requirements imposed to device simulation programs suitable for applicat