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Nonlinear Effects in the Piezoresistivity of p-Type Silicon

โœ Scribed by J. T. Lenkkeri


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
859 KB
Volume
136
Category
Article
ISSN
0370-1972

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Numerical simulation of radiation damage
โœ M. Petasecca; F. Moscatelli; D. Passeri; G.U. Pignatel; C. Scarpello ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 158 KB

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon,