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Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

✍ Scribed by P. Petrik; T. Lohner; M. Fried; N.Q. Khánh; O. Polgár; J. Gyulai

No coin nor oath required. For personal study only.

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