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Cobalt silicide formation by ion mixing

✍ Scribed by A.H. Hamdi; M.-A. Nicolet


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
356 KB
Volume
119
Category
Article
ISSN
0040-6090

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πŸ“œ SIMILAR VOLUMES


Mixing and Silicide Formation during Xe-
✍ S. Dhar; M. Milosavljevic; N. Bibic; K.P. Lieb πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 128 KB

Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5Β±2) Γ‚ 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter