𝔖 Bobbio Scriptorium
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Application of dynamic ion mixing in platinum silicide formation

✍ Scribed by S. Tamulevičius; L. Pranevic̆ius; J. Budinavičius


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
428 KB
Volume
53
Category
Article
ISSN
0169-4332

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Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter