Mixing and Silicide Formation during Xe-
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S. Dhar; M. Milosavljevic; N. Bibic; K.P. Lieb
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Article
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2000
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John Wiley and Sons
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English
⚖ 128 KB
Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter