✦ LIBER ✦

Cobalt deposition in porous silicon by chemical vapour infiltration and deposition; the effects of precursor instability

✍ Scribed by B.J. Aylett; L.G. Earwaker; K. Forcey; T. Giaddui; I.S. Harding

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 645 KB
Volume: 521
Category: Article
ISSN: 0022-328X
DOI: 10.1016/0022-328x(96)06238-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Metallisation of porous silicon by chemi

Metallisation of porous silicon by chemical vapour infiltration and deposition

✍ B.J Aylett; I.S Harding; L.G Earwaker; K Forcey; T Giaddui 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 476 KB

The effects of deposition variables on d

The effects of deposition variables on deposition rate in the chemical vapour deposition of silicon nitride

✍ Kyoung-Soo Yi; Ji-Bum Kim; Kwang-Joon Kim; John S. Chun 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 421 KB

Equilibrium and kinetics in the chemical

Equilibrium and kinetics in the chemical vapour deposition of silicon

✍ J. Bloem 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 605 KB

Chemical vapour deposition of metals and

Chemical vapour deposition of metals and metal silicides on the internal surfaces of porous silicon

✍ D.G. Anderson; N. Anwar; B.J. Aylett; L.G. Earwaker; M.I. Nasir; J.P.G. Farr; K. 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 326 KB

Effect of boron incorporation on the lat

Effect of boron incorporation on the lattice parameter and texture of diamond films deposited by chemical vapour deposition on silicon

✍ D. Chateigner; F. Brunet; A. Deneuville; P. Germi; M. Pernet; E. Gheeraert; P. G 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 477 KB

Analysis of the transition layer in sili

Analysis of the transition layer in silicon nitride films deposited by a low-pressure chemical vapour deposition

✍ Tanaka, Koki; Tsuge, Atsuko; Takiyama, Makoto; Shimizu, Ryuichi 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 246 KB 👁 2 views

A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroÑuoric acid (BHF) were investigated using Ruth