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ChemInform Abstract: Wafer Bonding and Layer Splitting for Microsystems

✍ Scribed by Qin-Yi Tong; Ulrich M. Goesele

Book ID
101891438
Publisher
John Wiley and Sons
Year
2010
Weight
24 KB
Volume
31
Category
Article
ISSN
0931-7597

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Fabrication of strained silicon on insulator (sSOI) substrates by wafer bonding and layer splitting is described in this paper. The sSi layer of 20 nm thickness is obtained on an 8 in. virtual substrate that consists of a plastically relaxed SiGe layer grown epitaxially on Si(0 0 1) by chemical vapo