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ChemInform Abstract: Structure of Very Thin Gold Layers Produced by Metalorganic Chemical Vapor Deposition.

โœ Scribed by D. W. ALLEN; J. HAIGH


Book ID
112023205
Publisher
John Wiley and Sons
Year
2010
Weight
30 KB
Volume
26
Category
Article
ISSN
0931-7597

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๐Ÿ“œ SIMILAR VOLUMES


ChemInform Abstract: Metalorganic Chemic
โœ S. L. STOLL; A. R. BARRON ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 33 KB ๐Ÿ‘ 2 views

InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball

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The growth of very thin, abrupt-interface, uniform epitaxial heterostructures of AlGaAs-GaAs and GaAsP-GaAs by metalorganic chemical vapor deposition (MOCVD) is described. A brief description of the growth process as it applies to thin layers erown uniformly over large area is given. High resolution