ChemInform Abstract: Structure of Very Thin Gold Layers Produced by Metalorganic Chemical Vapor Deposition.
โ Scribed by D. W. ALLEN; J. HAIGH
- Book ID
- 112023205
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 30 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0931-7597
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
InSe films are grown at 230-420 โข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โข C ball
The growth of very thin, abrupt-interface, uniform epitaxial heterostructures of AlGaAs-GaAs and GaAsP-GaAs by metalorganic chemical vapor deposition (MOCVD) is described. A brief description of the growth process as it applies to thin layers erown uniformly over large area is given. High resolution