ChemInform Abstract: Metalorganic Chemic
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S. L. STOLL; A. R. BARRON
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Article
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2010
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John Wiley and Sons
โ 33 KB
InSe films are grown at 230-420 โข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โข C ball