The growth of ultra-thin layer superlattices by metalorganic chemical vapor deposition

✍ Scribed by G. Costrini; M.A. Emanuel; M.E. Givens; J.J. Coleman; S.J. Jeng; C.M. Wayman

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 517 KB
• Volume: 2
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(86)90149-7

✦ Synopsis

The growth of very thin, abrupt-interface, uniform epitaxial heterostructures of AlGaAs-GaAs and GaAsP-GaAs by metalorganic chemical vapor deposition (MOCVD) is described. A brief description of the growth process as it applies to thin layers erown uniformly over large area is given. High resolution transmission electron microscopy (TEM) and secondary ion mass spoctrometry (SIMS) data on lattice matched ultra-thin superlattices of AIGaAs-GaAs and on strained layer superlattices (SLS) of GaAsP-GaAs are presented. Convergent beam electron diffraction techniques are used to obtain higher order lave zone line patterns from which the strain in these SLS structures can be determined.