๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

ChemInform Abstract: Filament-Activated Chemical Vapor Deposition of Nitride Thin Films

โœ Scribed by S. V. DESHPANDE; J. L. DUPUIE; E. GULARI


Book ID
112038142
Publisher
John Wiley and Sons
Year
2010
Weight
27 KB
Volume
27
Category
Article
ISSN
0931-7597

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Filament-activated chemical vapour depos
โœ Sadanand V. Deshpande; Jeffrey L. Dupuie; Erdogan Gulari ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 987 KB

We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tun

ChemInform Abstract: Metalorganic Chemic
โœ S. L. STOLL; A. R. BARRON ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 33 KB ๐Ÿ‘ 2 views

InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball