Chemical vapor deposition of tungsten oxide
β Scribed by Rein U. Kirss; Lamartine Meda
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 117 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0268-2605
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β¦ Synopsis
Crystalline and amorphous thin films of tungsten(VI) oxide can be prepared by chemical vapor deposition using a variety of volatile precursors below 500 Β°C. Deposition parameters for preparation of WO 3 films from tungsten hexacarbonyl [W(CO) 6 ], tungsten hexafluoride (WF 6 ), tungsten ethoxides [W(OEt) x , x = 5, 6] and tetra(allyl)tungsten [W(h 3 -C 3 H 5 ) 4 ] are summarized. The electrochromic behavior of these films is comparable with that observed for WO 3 films prepared by evaporation, sputtering and electrodeposition.
π SIMILAR VOLUMES
Films deposited using pulsed plasma-enhanced chemical vapor deposition (PECVD) from hexafluoropropylene oxide (HFPO) were investigated by X-ray photoelectron spectroscopy (XPS). As compared to continuous rf PECVD, pulsed excitation increases the CF 2 fraction in the film. Film composition was determ