Chemical gas etching of InP-based structures

✍ Scribed by I. Maximov; S. Jeppesen; L. Montelius; L. Samuelson

• Book ID: 104306317
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 220 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00161-x

✦ Synopsis

In this paper we present our results on chemical gas etching (CGE) of InP-based structures using C12 as an etch gas. Structures are patterned using electron beam lithography and lift-off technique, 100 A Cr serving as an etch mask. Both etching rate and surface morphology of InP etched in CGE are investigated as a function of surface temperature. Etching temperature of 280°C is shown to produce surface roughness comparable to unetched InP. Finally, fabrication of shallow etched InP/GaInAs wires with width as small as 75 nm is demonstrated.