Photochemical etching (PCE) as a method for preparation of InP semiconductor plan view samples for the transmission electron microscope is demonstrated and compared to the methods of ion milling and chemical thinning. PCE can produce small area samples for TEM analysis quickly and accurately. Also,
β¦ LIBER β¦
Thinning of InP by chemical etching
β Scribed by S. Aytac; A. Schlachetzki; H. -J. Prehn
- Book ID
- 104909753
- Publisher
- Springer
- Year
- 1983
- Tongue
- English
- Weight
- 339 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0261-8028
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