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InP sample preparation for the TEM by photochemical etching, ion milling, and chemical thinning

✍ Scribed by Dr. Theodore D. Lowes; Daniel T. Cassidy


Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
880 KB
Volume
23
Category
Article
ISSN
1059-910X

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✦ Synopsis


Photochemical etching (PCE) as a method for preparation of InP semiconductor plan view samples for the transmission electron microscope is demonstrated and compared to the methods of ion milling and chemical thinning. PCE can produce small area samples for TEM analysis quickly and accurately. Also, the resulting thin regions are surrounded by a built-in stabilizing structure that improves handleability and reduces the occurrence of handling induced fracture.