Chemical gas etching of InP-based struct
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I. Maximov; S. Jeppesen; L. Montelius; L. Samuelson
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Article
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1997
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Elsevier Science
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English
โ 220 KB
In this paper we present our results on chemical gas etching (CGE) of InP-based structures using C12 as an etch gas. Structures are patterned using electron beam lithography and lift-off technique, 100 A Cr serving as an etch mask. Both etching rate and surface morphology of InP etched in CGE are in