The inΓuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.
β¦ LIBER β¦
Chemical bonding in microcrystalline Si:H:Cl films studied by ion-induced Auger Electron Spectroscopy
β Scribed by E. Grossman; A. Grill; M. Polak
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 227 KB
- Volume
- 173
- Category
- Article
- ISSN
- 0040-6090
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