✦ LIBER ✦

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

✍ Scribed by Ya-Hui Yang; Yang, S.S.; Chen-Yen Kao; Kan-San Chou

Book ID: 115462004
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 289 KB
Volume: 31
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2010.2041425

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Highly transparent solution processed In

Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

✍ Y. Wang; S. W. Liu; X. W. Sun; J. L. Zhao; G. K. L. Goh; Q. V. Vu; H. Y. Yu 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 413 KB

Threshold voltage shift by controlling G

Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors

✍ Jun Young Choi; SangSig Kim; Sang Yeol Lee 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 397 KB

Electrical characteristics of solution-p

Electrical characteristics of solution-processed InGaZnO thin film transistors depending on Ga concentration

✍ Kim, Gun Hee ;Jeong, Woong Hee ;Kim, Hyun Jae 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 242 KB

## Abstract We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger ch

Electrical Instability of RF Sputter Amo

Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors

✍ Tze-Ching Fung; Abe, K.; Kumomi, H.; Kanicki, J. 📂 Article 📅 2009 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 817 KB

Self-Aligned Top-Gate Coplanar In-Ga-Zn-

Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

✍ Cheng-Han Wu; Hsing-Hung Hsieh; Chih-Wei Chien; Chung-Chih Wu 📂 Article 📅 2009 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 741 KB

Effects of low-temperature ozone anneali

Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors

✍ Keisuke Ide; Yutomo Kikuchi; Kenji Nomura; Toshio Kamiya; Hideo Hosono 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 852 KB