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Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors

✍ Scribed by Keisuke Ide; Yutomo Kikuchi; Kenji Nomura; Toshio Kamiya; Hideo Hosono

Book ID: 113937349
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 852 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.062

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