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Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

✍ Scribed by Y. Wang; S. W. Liu; X. W. Sun; J. L. Zhao; G. K. L. Goh; Q. V. Vu; H. Y. Yu

Publisher
Springer
Year
2010
Tongue
English
Weight
413 KB
Volume
55
Category
Article
ISSN
0928-0707

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prober from SÜSS in a dark environment. An Att/Huber unichiller and a temperature controller were used to set the temperature between 293 K to 423 K. At each temperature step thermal equilibrium was awaited before starting the measurements.