Characterization of thin films and materials used in semiconductor technology by spectroscopic ellipsometry
β Scribed by F. Ferrieu; J.H. Lecat
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 418 KB
- Volume
- 164
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
Cd 0.96 Zn 0.04 Te thin films are deposited onto well cleaned glass substrates (Corning 7059) kept at room temperature by vacuum evaporation and the films are annealed at 423 K. Rutherford Backscattering Spectrometry and X-ray diffraction techniques are used to determine the thickness, composition a
Spectroscopic ellipsometry has been used to determine the optical constants-complex dielectric constant (e\* = e 1 + e 2 ), refractive index (n), extinction coefficient (k), absorption coefficient (a) and normal incidence reflectivity (R)-of two-source vacuum-evaporated polycrystalline Cd 1 Γx Zn x