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Characterization of the Microhardness of Ion-implanted GaP

✍ Scribed by Doz. Dr. sc. C. Ascheron; Doz. Dr. sc. H. Neumann; Prof. Dr. sc. G. Kühn

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
446 KB
Volume
26
Category
Article
ISSN
0232-1300

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✦ Synopsis

Characterization of the Microhardness of Ion-implanted GaP

Dedicated to Professor E. BUTTER in honour of his 60th birthday Implantation induced changes of the microhardness are studied in GaP single crystals which were bombarded with ions in the range of mass numbers M = 1-40. It IS observed that point defects and incorporated hydrogen have a stronger hardening effect. The effect of defect complexes is lower, and amorphized layers are softer than crystalline layers.

Gap-Einkristalle werden mit Ionen der Massezahlen 1 bis 40 beschossen. Dabei sind Harteerhohungen zu verzeichnen, die mit der Implantat-und Punktdefektkonzentration korrelieren. Defektkomplexe wirken schwacher materialhartend. Amorphe Gap-Schichten weisen cine geringere Mikroharte als einkristallines Material auf.

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