## Characterization of the Microhardness of Ion-implanted GaP Dedicated to Professor E. BUTTER in honour of his 60th birthday Implantation induced changes of the microhardness are studied in GaP single crystals which were bombarded with ions in the range of mass numbers M = 1-40. It IS observed th
β¦ LIBER β¦
Change of microhardness on ion implanted tungsten carbide
β Scribed by Dr. A. Kolitsch; Dr. E. Richter
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 166 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Characterization of the Microhardness of
β
Doz. Dr. sc. C. Ascheron; Doz. Dr. sc. H. Neumann; Prof. Dr. sc. G. KΓΌhn
π
Article
π
1991
π
John Wiley and Sons
π
English
β 446 KB
π 1 views
Microhardness of ZnSe and its change by
β
Dr. C. Ascheron; Dr. H. Neumann; Prof. Dr. G. KΓΌhn; C. Haase
π
Article
π
1989
π
John Wiley and Sons
π
English
β 290 KB
Ultrarapid Materials Processing: Synthes
β
Simon R. Vallance; Sam Kingman; Duncan H. Gregory
π
Article
π
2007
π
John Wiley and Sons
β 12 KB
π 1 views
Ultrarapid Materials Processing: Synthes
β
S.βR. Vallance; S. Kingman; D.βH. Gregory
π
Article
π
2007
π
John Wiley and Sons
π
English
β 306 KB
π 1 views
On the Analysis of Hydrogen in as grown
β
M. Udhayasankar; J. Kumar; P. Ramasamy; D.K. Avasthi; D. Kabiraj
π
Article
π
2000
π
John Wiley and Sons
π
English
β 139 KB
π 2 views
Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t
Flow-injection potentiometric detection
β
Zuliang Chen; Peter W. Alexander
π
Article
π
1997
π
John Wiley and Sons
π
English
β 383 KB