## Characterization of the Microhardness of Ion-implanted GaP Dedicated to Professor E. BUTTER in honour of his 60th birthday Implantation induced changes of the microhardness are studied in GaP single crystals which were bombarded with ions in the range of mass numbers M = 1-40. It IS observed th
Depth profile of the microhardness in helium implanted GaP
β Scribed by Dr. C. Ascheron; Dr. H. Neumann
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 240 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0232-1300
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