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Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors

โœ Scribed by Man Wong; Zhonghe Jin; Bhat, G.A.; Wong, P.C.; Hoi Sing Kwok


Book ID
114538159
Publisher
IEEE
Year
2000
Tongue
English
Weight
733 KB
Volume
47
Category
Article
ISSN
0018-9383

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Effects of the thickness of the channel
โœ C.H. Woo; Y.Y. Kim; B.H. Kong; H.K. Cho ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 712 KB

InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio