Characterization of nitrogen-doped amorp
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J Ε afrΓ‘nkovΓ‘a; J Hurana; I HotovΓ½b; AP Kobzevc; SA Korenevc
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Article
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1998
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Elsevier Science
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English
β 202 KB
The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of magnitude as the nitro