Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

✍ Scribed by Meneghini, M.; la Grassa, M.; Vaccari, S.; Galler, B.; Zeisel, R.; Drechsel, P.; Hahn, B.; Meneghesso, G.; Zanoni, E.

• Book ID: 121741659
• Publisher: American Institute of Physics
• Year: 2014
• Tongue: English
• Weight: 737 KB
• Volume: 104
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4868719