Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

✍ Scribed by Armstrong, A.; Henry, T. A.; Koleske, D. D.; Crawford, M. H.; Westlake, K. R.; Lee, S. R.

• Book ID: 120324762
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 685 KB
• Volume: 101
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4759003