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An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

โœ Scribed by Jong-In, Shim; Hyungsung, Kim; Dong-Soo, Shin; Han-Youl, Yoo

Book ID
120353715
Publisher
The Korean Physical Society
Year
2011
Tongue
English
Weight
384 KB
Volume
58
Category
Article
ISSN
0374-4884

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