SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes

✍ Scribed by Shim, Jong-In; Kim, Hyunsung; Shin, Dong-Soo; Ryu, Han-Youl; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon

• Book ID: 115500193
• Publisher: SPIE
• Year: 2011
• Weight: 340 KB
• Volume: 7939
• Category: Article
• DOI: 10.1117/12.874304