Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

✍ Scribed by B. Ya. Ber; E. V. Bogdanova; A. A. Greshnov; A. L. Zakgeim; D. Yu. Kazanzev; A. P. Kartashova; A. S. Pavluchenko; A. E. Chernyakov; E. I. Shabunina; N. M. Shmidt; E. B. Yakimov

• Book ID: 111444879
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 228 KB
• Volume: 45
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782611030079