Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

✍ Scribed by Bochkareva, N. I.; Voronenkov, V. V.; Gorbunov, R. I.; Zubrilov, A. S.; Latyshev, P. E.; Lelikov, Yu. S.; Rebane, Yu. T.; Tsyuk, A. I.; Shreter, Yu. G.

• Book ID: 118010497
• Publisher: Springer
• Year: 2012
• Tongue: English
• Weight: 386 KB
• Volume: 46
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782612080039