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Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

✍ Scribed by Cheng-Huang Kuo; Fu, Y.K.; Chi, G.C.; Shoou-Jinn Chang


Book ID
114565653
Publisher
IEEE
Year
2010
Tongue
English
Weight
826 KB
Volume
46
Category
Article
ISSN
0018-9197

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