Titanium dioxide films have been deposited using DC magnetron sputtering technique onto well-cleaned p-silicon substrates at an oxygen partial pressure of 7 Γ 10 -5 mbar and at a sputtering pressure (Ar+O 2 ) of 1 Γ 10 -3 mbar. The deposited films were calcinated at 673 and 773 K. The composition of
β¦ LIBER β¦
Characterization of sputtered NiO films using XRD and AFM
β Scribed by I. Hotovy; J. Huran; L. Spiess
- Book ID
- 111590228
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 323 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0022-2461
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