✦ LIBER ✦

Characterization of silicided shallow n+p junctions formed by P+ implantation into thin Ti films on Si substrates

✍ Scribed by M.H. Juang; H.C. Cheng

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 618 KB
Volume: 35
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(92)90095-t

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of shallow p+n junctions by im

Formation of shallow p+n junctions by implanting BF2− ions into thin cobalt films on silicon substrates

✍ M.H. Juang; H.C. Cheng 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 411 KB

Electrical characterization of p+/n shal

Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon

✍ E. Landi; S. Solmi 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 677 KB

Formation of self-aligned TiSi2p+−n junc

Formation of self-aligned TiSi2p+−n junctions by implanting BF2+ ions through thin Ti or SiO2 film on Si substrate rapid thermal annealing

✍ M.H. Juang; H.C. Cheng 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 578 KB

Electroluminescence Characterization of

Electroluminescence Characterization of Cubic Gallium Nitride p–n Junctions Grown on SiC/Si Substrates by MBE

✍ Gamez-Cuatzin, H. ;Tardy, J. ;Rojo-Romeo, P. ;Philippe, A. ;Bru-Chevallier, C. ; 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 145 KB 👁 2 views

Formation of shallow p + n junctions by

Formation of shallow p + n junctions by implanting BF2 ions into thin cobalt films on silicon substrates: M. H. Juang and H. C. Cheng. Solid-St. Electron. 35, 453 (1992)

📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 51 KB

Electrical characterization of p+/n shal

Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon: E. Landi and S. Solmi. Solid-St. Electron.29(11), 1181 (1986)

📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 135 KB