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Formation of self-aligned TiSi2p+−n junctions by implanting BF2+ ions through thin Ti or SiO2 film on Si substrate rapid thermal annealing

✍ Scribed by M.H. Juang; H.C. Cheng


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
578 KB
Volume
35
Category
Article
ISSN
0038-1101

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