Characterization of rapid thermal oxidation of AlAs on GaAs/AlGaAs structure

✍ Scribed by Ng, S. L.; Ooi, B. S.; Lam, Y. L.; Chan, Y. C.; Zhou, Y.; Buddhudu, S.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 155 KB
• Volume: 29
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(200001)29:1<33::aid-sia690>3.0.co;2-m

✦ Synopsis

We report on the oxidation of the AlAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AlAs layer was carried out under oxygen-rich conditions in the temperature range 600 -800 °C using a rapid thermal processor. Energy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AlAs layer after processing. It was found that oxidation of the AlAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic force microscopy measurements, the film was found to be of good uniformity.